BAV99
Surface-mount Dual Switching Diodes
Voltage range 75 Volts
Power Dissipation
350 mWatts
FEATURES
Fast switching speed
Surface mount package ideally suited for
automatic insertion
For general purpose switching applications
High conductance
SOT-23
0.020(0.51)
0.015(0.37)
0.055(1.40)
0.047(1.19)
0.098(2.50)
0.083(2.10)
MECHANICAL DATA
Case: SOT-23, Molded plastic
Terminals: Matte tin plating
Polarity: See diagram
Marking: JE
Weight: 0.008 gram (approx.
)
0.080(2.05)
0.070(1.78)
0.024(0.61)
0.018(0.45)
0.120(3.05)
0.104(2.65)
0.041(1.05)
0.047(0.89)
0.043(1.10)
0.035(0.89)
0.006(0.15)
0.001(0.013)
0.024(0.61)
0.018(0.45)
0.007(0.178)
0.003(0.076)
Dimensions in inches and (millimeters)
Pb-free lead finish (second-level interconnect).
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
BAV99
Non-Repetitive Peak Reverse Voltage
V
RM
100
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectifier Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current
@ t=1.0uS
@ t=1.0S
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air
(Note 1)
Operating and Storage Temperature Range
Units
V
V
V
mA
mA
A
mW
°C/W
°C
Max
0.715
0.855
1.0
1.25
2.5
50
30
25
V
RRM
V
RWM
V
R
75
53
300
150
2.0
1.0
V
R(RMS)
I
FM
Io
I
FSM
Pd
R
thja
T
J
, T
STG
Symbol
350
357
-65 to + 150
Min
-
Parameter
Forward Voltage
IF=1.0mA
IF= 10mA
IF = 50mA
IF=150mA
VR=75V
VR=75V, Tj=150°C
VR=25V, TJ=150°C
VR=20V
VR=0, f=1.0MHz
Units
V
V
F
Peak Reverse Current
I
R
-
Junction Capacitance
Cj
-
2.0
trr
-
4.0
Notes: 1. Valid provided that terminals are kept at ambient temperature.
2. Reverse recovery test conditions: IF=IR=10mA, Irr=0.1 x I
R
, R
L
=100Ω
Reverse Recovery Time (Note 2)
uA
nA
pF
ns
8/26/2004 Rev.1.01
www.SiliconStandard.com
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