BAW56LT1
Switching Diode
FEATURES
Power dissipation, P
D
: 225 mW (T
A
=25℃)
Forward Current, I
F
: 200 mA
Reverse Voltage, V
R
: 70 V
Operating and storage junction temperature
range: T
J
, T
stg
: -55℃ to +150℃
SOT-23 Plastic-Encapsulate package
Device Making: A1
ELECTRICAL CHARACTERISTICS
Note:
Unless otherwise specified, these specifications apply over the operating ambient temperature of 25℃.
01/14/2007 Rev. 1.00
www.SiliconStandard.com
1