FRA801G thru FRA807G
RATINGS AND CHARACTERISTIC CURVES
(FRA801G THRU FRA807G)
10
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
100
FIG.2- TYPICAL REVERSE CHARACTERISTICS
AVERAGE FORWARD CURRENT. (A)
8
40
INSTANTANEOUS REVERSE CURRENT. ( A)
6
Tj=125
0
C
10
4
2
4
2
1
Tj=75
0
C
0
0
50
100
o
CASE TEMPERATURE. ( C)
150
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
150
0.4
0.2
PEAK FORWARD SURGE CURRENT. (A)
Tj=25
0
C
125
TJ=125
0
C
8.3ms Single Half Sine Wave
JEDEC Method
0.1
0
20
40
60
80
100
120
140
100
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
75
50
400
25
200
0
NUMBER OF CYCLES AT 60Hz
100
FIG.5- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT. (A)
1
2
5
10
20
50
100
FIG.4- TYPICAL JUNCTION CAPACITANCE
120
Tj=25
0
C
f=1.0MHz
Vsig=50mVp-p
40
20
10
100
CAPACITANCE.(pF)
80
4
2
1
60
40
0.4
20
0.2
0.1
0.6
Tj=25
o
C
Pulse Width=300 s
1% Duty Cycle
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
0.1
0.5
1
5
10
50
100
500 1000
REVERSE VOLTAGE. (V)
INSTANTANEOUS FORWARD VOLTAGE. (V)
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
+0.5A
(-)
DUT
(+)
50Vdc
(approx)
(-)
PULSE
GENERATOR
(NOTE 2)
1W
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
(+)
0
-0.25A
trr
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
09/18/2007 Rev.1.00
www.SiliconStandard.com
2
SSC [ SILICON STANDARD CORP. ]
