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FRA806G 参数 Datasheet PDF下载

FRA806G图片预览
型号: FRA806G
PDF下载: 下载PDF文件 查看货源
内容描述: 8.0安培。玻璃钝化快速恢复整流器 [8.0 AMPS. Glass Passivated Fast Recovery Rectifiers]
分类和应用: 整流二极管局域网快速恢复二极管
文件页数/大小: 3 页 / 176 K
品牌: SSC [ SILICON STANDARD CORP. ]
 浏览型号FRA806G的Datasheet PDF文件第2页浏览型号FRA806G的Datasheet PDF文件第3页  
FRA801G thru FRA807G
8.0 AMPS. Glass Passivated Fast
Recovery Rectifiers
FEATURES
Glass passivated chip junction.
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Low power loss
TO-220AC
.185(4.70)
.175(4.44)
.412(10.5)
MAX
DIA
.154(3.91)
.148(3.74)
.27(6.86)
.23(5.84)
.594(15.1)
.587(14.9)
.055(1.40)
.045(1.14)
.113(2.87)
.103(2.62)
MECHANICAL DATA
Cases: TO-220AC Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Pure tin plated, Lead free. Leads
solderable per MIL-STD-202, Method 208
guaranteed
Polarity: As marked
High temperature soldering guaranteed:
o
260
C
/10 seconds .16”, (4.06mm) from
case.
Mounting position: Any
Weight: 2.24 grams
o
PIN1
.16(4.06)
.14(3.56)
2
.11(2.79)
.10(2.54)
.56(14.22)
.53(13.46)
.037(0.94)
.027(0.68)
.205(5.20)
.195(4.95)
.025(0.64)
.014(0.35)
PIN 1
PIN 2
CASE
Dimensions in inches and (millimeters)
Pb-free; RoHS-compliant
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
@T
C
= 55
o
C
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
Maximum Instantaneous Forward Voltage @ 8.0A
Maximum DC Reverse Current @ T
C
=25 C
at Rated DC Blocking Voltage @ T
C
=125
o
C
Maximum Reverse Recovery Time ( Note 2 )
Typical Junction Capacitance ( Note 1 ) T
J=
25℃
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
o
Symbol
FRA
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJA
T
J
,T
STG
801G
FRA
802G
FRA
803G
FRA
804G
FRA
805G
FRA
806G
FRA
807G
Units
V
V
V
A
A
V
uA
uA
nS
pF
o
C/W
o
C
50
35
50
100
70
100
200
140
200
400
280
400
8.0
150
1.3
5.0
100
600
420
600
800
560
800
1000
700
1000
150
250
50
3.0
-65 to +150
500
Notes:
1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
2. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
3. Thermal Resistance from Junction to Case, with Heatsink size 2” x 3” x 0.25” Al-Plate.
09/18/2007 Rev.1.00
www.SiliconStandard.com
1