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RMB6S 参数 Datasheet PDF下载

RMB6S图片预览
型号: RMB6S
PDF下载: 下载PDF文件 查看货源
内容描述: 表面贴装桥式整流器 [Surface Mount Bridge Rectifiers]
分类和应用:
文件页数/大小: 3 页 / 188 K
品牌: SSC [ SILICON STANDARD CORP. ]
 浏览型号RMB6S的Datasheet PDF文件第2页浏览型号RMB6S的Datasheet PDF文件第3页  
RMB2S thru RMB6S
Surface Mount Bridge Rectifiers
PRODUCT SUMMARY
0.8 Amps Miniature Glass Passivated
Fast Recovery Surface Mount Bridge Rectifiers
FEATURES
Ideal for printed circuit board

Reliable low cost construction utilizing molded
plastic technique

High surge current capability

High temperature soldering guaranteed:
o
260 C / 10 seconds at 5 lbs., (2.3 kg)
tension

Small size, simple installation

Pure tin plated terminal, Lead free.
Leads solderable per MIL-STD-202
Method 208
MBS
.193(4.90)
.177(4.50)
.033(0.84)
.022(0.56)
.157(4.00)
.142(3.60)
.272(6.9)
MAX
.102(2.60)
.087(2.20)
.106(2.70)
.090(2.30)
.053(1.53)
.037(0.95)
.014(0.35
.006(0.15
.008(0.20) .11
4(2.9)
.043(1.10) .083(2.12)
MAX
MAX
.028(0.70) .043(1.10)
Pb-free; RoHS-compliant
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
On glass-epoxy P.C.B.
On aluminum substrate
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC method )
Maximum Instantaneous Forward Voltage
@ 0.4A
Maximum DC Reverse Current @ T
A
=25
o
C
at Rated DC Blocking Voltage @ T
A
=125
o
C
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
RMB2S
200
140
200
RMB4S
400
280
400
0.5
0.8
30
1.0
RMB6S
600
420
600
Units
V
V
V
A
A
V
uA
uA
nS
pF
o
C
/W
o
o
5.0
100
Maximum Reverse Recovery Time at (Note 1)
Trr
150
Typical Junction Capacitance Per Leg
Cj
13
Typical Thermal Resistance Per Leg
R
θJA
85
Operating Temperature Range
T
J
-55 to +150
Storage Temperature Range
T
STG
-55 to +150
Note: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
C
C
12/23/2007 Rev.1.00
www.SiliconStandard.com
1