S1A – S1M
MAXIMUM RATINGS
(
T
A
=25℃ unless otherwise specified)
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
(see fig.1)
Peak forward surge current 8.3ms single
half sine-wave superimposed on rated
load(JEDEC Method) T
L
=110℃
Maximum instantaneous forward voltage at
1.0A
Maximum DC reverse current @T
A
=25℃
at rated DC blocking voltage @T
A
=125℃
Typical reverse recovery time at
I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
Typical junction capacitance at 4.0V, 1MHz
Typical thermal resistance (NOTE 1)
Symbols S1A
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
40.0
50
35
50
S1B
100
70
100
S1D
200
140
200
S1G
400
280
400
1.0
30.0
S1J
600
420
600
S1K
800
560
800
S1M
1000
700
1000
Units
Volts
Volts
Volts
Amp
Amps
V
F
I
R
1.0
1.10
5.0
50
Volts
uA
t
rr
C
J
R
R
JL
75
27
1.0
12
85
30
-55 to +150
-55 to +150
uS
pF
℃/W
Operating junction temperature range
Storage temperature range
NOTE:
1.
T
J
T
STG
℃
℃
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with
0.2 x 0.2" (5.0 x 5.0mm) copper pad areas
01/01/2007 Rev. 2.00
www.SiliconStandard.com
2
SSC [ SILICON STANDARD CORP. ]
