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SMAJ24 参数 Datasheet PDF下载

SMAJ24图片预览
型号: SMAJ24
PDF下载: 下载PDF文件 查看货源
内容描述: 瞬态电压抑制器 [Transient Voltage Suppressors]
分类和应用:
文件页数/大小: 4 页 / 597 K
品牌: SSC [ SILICON STANDARD CORP. ]
 浏览型号SMAJ24的Datasheet PDF文件第1页浏览型号SMAJ24的Datasheet PDF文件第2页浏览型号SMAJ24的Datasheet PDF文件第4页  
SMAJ Series
ELECTRICAL PARAMETERS
At 25°C ambient temperature unless otherwise specified. V
F
=3.5V at I
F
=25A (uni-directional only)
Device
marking
co d e
Device type
SMAJ33
SMAJ33A
SMAJ36
SMAJ36A
SMAJ40
SMAJ40A
SMAJ43
SMAJ43A
SMAJ45
SMAJ45A
SMAJ48
SMAJ48A
SMAJ51
SMAJ51A
SMAJ54
SMAJ54A
SMAJ58
SMAJ58A
SMAJ60
SMAJ60A
SMAJ64
SMAJ64A
SMAJ70
SMAJ70A
SMAJ75
SMAJ75A
SMAJ78
SMAJ78A
SMAJ85
SMAJ85A
SMAJ90
SMAJ90A
SMAJ100
SMAJ100A
SMAJ110
SMAJ110A
SMAJ120
SMAJ120A
SMAJ130
SMAJ130A
SMAJ150
SMAJ150A
SMAJ160
SMAJ160A
SMAJ170
SMAJ170A
SMAJ180A
SMAJ200A
SMAJ220A
SMAJ250A
SMAJ300A
SMAJ350A
SMAJ400A
SMAJ440A
UNI
CL
CM
CN
CP
CQ
CR
CS
CT
CU
CV
CW
CX
CY
CZ
RD
RE
RF
RG
RH
RK
RL
RM
RN
RP
RQ
RR
RS
RT
RU
RV
RW
RX
RY
RZ
SD
SE
SF
SG
SH
SK
SL
SM
SN
SP
SQ
SR
ST
SV
SX
SZ
TE
TG
TK
TM
BI
YL
YM
YN
YP
YQ
YR
YS
YT
YU
YV
YW
YX
YY
YZ
ZD
ZE
ZF
ZG
ZH
ZK
ZL
ZM
ZN
ZP
ZQ
ZR
ZS
ZT
ZU
ZV
ZW
ZX
ZY
ZZ
VD
VE
VF
VG
VH
VK
VL
VM
VN
VP
VQ
VR
VT
VV
VX
VZ
UE
UG
UK
UM
Breakdow n voltage
V
(BR)
(Volts)
(1)
Min.
36.7
36.7
40.0
40.0
44.4
44.4
47.8
47.8
50.0
50.0
53.3
53.3
56.7
56.7
60.0
60.0
64.4
64.4
66.7
66.7
71.1
71.1
77.8
77.8
83.3
83.3
86.7
86.7
94.4
94.4
100
100
111
111
122
122
133
133
144
144
167
167
178
178
189
189
201
224
246
279
335
391
447
492
Max.
44.9
40.6
48.9
44.2
54.3
49.1
58.4
52.8
61.1
55.3
65.1
58.9
69.3
62.7
73.3
66.3
78.7
71.2
81.5
73.7
86.9
78.6
95.1
86.0
102
92.1
106
95.8
115
104
122
111
136
123
149
135
163
147
176
159
204
185
218
197
231
209
222
247
272
309
371
432
494
543
Test
current
at I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
voltage
V
WM
(Volts)
33
33
36
36
40
40
43
43
45
45
48
48
51
51
54
54
58
58
60
60
64
64
70
70
75
75
78
78
85
85
90
90
100
100
110
110
120
120
130
130
150
150
160
160
170
170
180
200
220
250
300
350
400
440
Maximum
reverse
leakage
at V
WM
I
D(3)
(uA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Maximum
peak pulse
surge
current
I
PPM(2)
(A)
6.8
7.5
6.2
6.9
5.6
6.2
5.2
5.8
5.0
5.5
4.7
5.2
4.4
4.9
4.2
4.6
3.9
4.3
3.7
4.1
3.5
3.9
3.2
3.5
3.0
3.3
2.9
3.2
2.0
2.2
1.9
2.1
1.7
1.9
1.5
1.7
1.4
1.6
1.3
1.4
1.1
1.2
1.0
1.2
0.99
1.09
1.4
1.2
1.1
1.0
0.8
0.7
0.6
0.6
Maximum
clamping
voltage
at I
PPM
V
C
(Volts)
59.0
53.3
64.3
58.1
71.4
64.5
76.7
69.4
80.3
72.7
85.5
77.4
91.1
82.4
96.3
87.1
103
93.6
107
96.8
114
103
125
113
134
121
139
126
151
137
160
146
179
162
196
177
214
193
231
209
268
243
287
259
304
275
292
324
356
405
486
567
648
713
Notes:
1. V
(BR)
measured after I
T
applied for 300us square wave pulse or equivalent
2. Surge current waveform per Fig. 3 and derate per Fig. 2
3. For bi-directional types having V
WM
of 10 Volts and less, the I
D
limit is doubled
4. All terms and symbols are consistent with ANSI/IEEE C62.35
5. For parts without A, the V
BR
is +10%
9/21/2006 Rev.4.01
www.SiliconStandard.com
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