SMBJ Series
ELECTRICAL PARAMETERS
At 25°C ambient temperature unless otherwise specified. V
F
=3.5V at I
F
=25A (uni-directional only)
Breakdow n voltage
V
(BR)
(Volts)
(1)
Min.
36.7
36.7
40.0
40.0
44.4
44.4
47.8
47.8
50.0
50.0
53.3
53.3
56.7
56.7
60.0
60.0
64.4
64.4
66.7
66.7
71.1
71.1
77.8
77.8
83.3
83.3
86.7
86.7
94.4
94.4
100
100
111
111
122
122
133
133
144
144
167
167
178
178
189
189
201
224
246
279
335
391
447
492
Max.
44.9
40.6
48.9
44.2
54.3
49.1
58.4
52.8
61.1
55.3
65.1
58.9
69.3
62.7
73.3
66.3
78.7
71.2
81.5
73.7
86.9
78.6
95.1
86.0
102
92.1
106
95.8
115
104
122
111
136
123
149
135
163
147
176
159
204
185
218
197
231
209
222
247
272
309
371
432
494
543
Maximum
reverse
leakage
at V
WM
I
D(3)
(uA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Maximum
peak pulse
surge
current
I
PPM(2)
(A)
10.2
11.3
9.3
10.3
8.4
9.3
7.8
8.6
7.5
8.3
7.0
7.8
6.6
7.3
6.2
6.9
5.8
6.4
5.6
6.2
5.3
5.8
4.8
5.3
4.5
5.0
4.3
4.8
4.0
4.4
3.8
4.1
3.4
3.7
3.1
3.4
2.8
3.1
2.6
2.9
2.2
2.5
2.1
2.3
2.0
2.2
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.9
Maximum
clamping
voltage
at I
PPM
V
C
(Volts)
59.0
53.3
64.3
58.1
71.4
64.5
76.7
69.4
80.3
72.7
85.5
77.4
91.1
82.4
96.3
87.1
103
93.6
107
96.8
114
103
125
113
134
121
139
126
151
137
160
146
179
162
196
177
214
193
231
209
268
243
287
259
304
275
292
324
356
405
486
567
648
713
Device marking
co d e
Device type
SMBJ33
SMBJ33A
SMBJ36
SMBJ36A
SMBJ40
SMBJ40A
SMBJ43
SMBJ43A
SMBJ45
SMBJ45A
SMBJ48
SMBJ48A
SMBJ51
SMBJ51A
SMBJ54
SMBJ54A
SMBJ58
SMBJ58A
SMBJ60
SMBJ60A
SMBJ64
SMBJ64A
SMBJ70
SMBJ70A
SMBJ75
SMBJ75A
SMBJ78
SMBJ78A
SMBJ85
SMBJ85A
SMBJ90
SMBJ90A
SMBJ100
SMBJ100A
SMBJ110
SMBJ110A
SMBJ120
SMBJ120A
SMBJ130
SMBJ130A
SMBJ150
SMBJ150A
SMBJ160
SMBJ160A
SMBJ170
SMBJ170A
SMBJ180A
SMBJ200A
SMBJ220A
SMBJ250A
SMBJ300A
SMBJ350A
SMBJ400A
SMBJ440A
UNI
ML
MM
MN
MP
MQ
MR
MS
MT
MU
MV
MW
MX
MY
MZ
ND
NE
NF
NG
NH
NK
NL
NM
NN
NP
NQ
NR
NS
NT
NU
NV
NW
NX
NY
NZ
PD
PE
PF
PG
PH
PK
PL
PM
PN
PP
PQ
PR
PT
PV
PX
PZ
QE
QG
QK
QM
BI
CL
CM
CN
CP
CQ
CR
CS
CT
CU
CV
CW
CX
CY
CZ
DD
DE
DF
DG
DH
DK
DL
DM
DN
DP
DQ
DR
DS
DT
DU
DV
DW
DX
DY
DZ
FD
FE
FF
FG
FH
FK
FL
FM
FN
FP
FQ
FR
FT
FV
FX
FZ
GE
GG
GK
GM
Test
current
at I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
voltage
V
WM
(Volts)
33
33
36
36
40
40
43
43
45
45
48
48
51
51
54
54
58
58
60
60
64
64
70
70
75
75
78
78
85
85
90
90
100
100
110
110
120
120
130
130
150
150
160
160
170
170
180
200
220
250
300
350
400
440
Notes:
1. V
(BR)
measured after I
T
applied for 300us square wave pulse or equivalent
2. Surge current waveform per Fig. 3 and derate per Fig. 2
3. For bi-directional types having V
WM
of 10 Volts and less, the I
D
limit is doubled
4. All terms and symbols are consistent with ANSI/IEEE C62.35
5. For parts without A, the V
BR
is +10%
9/21/2006 Rev.4.01
www.SiliconStandard.com
3 of 4
SSC [ SILICON STANDARD CORP. ]
