SS22-SS215
SCHOTTKY BARRIER RECTIFIERS
PRODUCT SUMMARY
2.0 AMPS Surface Mount
SMB/DO-214AA
.083(2.10)
.077(1.95)
.147(3.73)
.137(3.48)
FEATURES
For surface mounted application
Easy pick and place
Metal to silicon rectifier, majority carrier conduction
Low power loss, high efficiency
High current capability, low VF
High surge current capability
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
Epitaxial construction
High temperature soldering:
o
260 C / 10 seconds at terminals
.187(4.75)
.167(4.25)
.012(.31)
.006(.15)
.103(2.61)
.078(1.99)
.012(.31)
.006(.15)
.056(1.41)
.035(0.90)
.209(5.30)
.201(5.10)
.008(.20)
.004(.10)
MECANICAL DATA
Case: Molded plastic
Terminals: Pure tin plated, lead free.
Polarity: Indicated by cathode band
Packaging: 12mm tape per EIA STD RS-481
Weight: 0.093gram
o
Dimensions in inches and (millimeters)
Pb-free; RoHS-compliant
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
L
(See Fig. 1)
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
(Note 1)
IF= 2.0A @ 25
o
C
@ 100
o
C
o
Maximum DC Reverse Current
@ T
A
=25
C at
o
Rated DC Blocking Voltage
@ T
A
=125
C
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance ( Note 2 )
Operating Temperature Range
Storage Temperature Range
Notes:
Symbol
SS
22
20
V
RRM
14
V
RMS
20
V
DC
I
(AV)
I
FSM
V
F
I
R
Cj
R
θJL
R
θJA
T
J
SS
23
30
21
30
SS
24
40
28
40
SS
25
50
35
50
2.0
50
SS
26
60
42
60
SS
29
90
63
90
SS
210
100
70
100
SS
Units
215
150
V
105
V
150
V
A
A
0.5
0.4
0.4
10
0.70
0.65
0.85
0.95
0.70
0.80
0.1
5.0
V
mA
mA
pF
o
130
17
75
-65 to +125
-65 to +150
-65 to +150
C/W
o
o
T
STG
1. Pulse Test with PW=300 usec, 1% Duty Cycle
2. Measured on P.C.Board with 0.4” x 0.4”(10mm x 10mm) Copper Pad Areas.
3. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
C
C
04/05/2007 Rev.1.00
www.SiliconStandard.com
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