SSM1333GU
P-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BV
DSS
R
DS(ON)
I
D
DESCRIPTION
The SSM1333GU acheives fast switching performance
with low gate charge without a complex drive circuit. It
is suitable for low voltage applications such as drivers,
high-side line and general load-switching circuits.
The SSM1333GU is supplied in an RoHS-compliant
SOT-323/SC-70 package, which is widely used for
low power commercial and industrial surface mount
applications.
-20V
600mΩ
-550mA
Pb-free; RoHS-compliant SOT-323/SC-70
D
S
SOT-323/SC-70
G
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
STG
T
J
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
3,
T
A
= 25°C
T
A
= 70°C
Pulsed drain current
1,2
Total power dissipation , T
A
= 25°C
Linear derating factor
Storage temperature range
Operating junction temperature range
3
Value
-20
±
12
-550
-440
-2.5
0.35
0.003
-55 to 150
-55 to 150
Units
V
V
mA
mA
A
W
W/°C
°C
°C
THERMAL CHARACTERISTICS
Symbol
R
ΘJA
Parameter
Maximum thermal resistance, junction-ambient
3
Value
360
Units
°C/W
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
3.Mounted on FR4 board, t < 10 sec.
11/26/2005 Rev.3.01
www.SiliconStandard.com
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SSC [ SILICON STANDARD CORP. ]
