SSM2030GM
N- and P-channel Enhancement-mode Power MOSFETs
Simple drive requirement
Lower gate charge
Fast switching characteristics
Pb-free; RoHS compliant.
D2
D1
D2
D1
D1
D1
G2
G2
S2
S2
G1
S1
G1
S1
D2
N-CH BV
DSS
R
DS(ON)
I
D
P-CH BV
DSS
R
DS(ON)
I
D
D1
20V
30mΩ
6A
-20V
50mΩ
-5A
D2
SO-8
DESCRIPTION
Advanced Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching, ruggedized
device design, low on-resistance and cost-effectiveness.
The SSM2030GM is in an SO-8 package, which is widely preferred
for commercial and industrial surface mount applications. This device is
suitable for low voltage applications requiring complementary N and P MOSFETs.
G1
G2
S1
S2
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
GS
I
D
@ T
A
=25°C
I
D
@ T
A
=70°C
I
DM
P
D
@ T
A
=25°C
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1,2
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
20
±8
+6
+4.8
+20
2.0
0.016
-55 to 150
-55 to 150
Rating
N-channel
P-channel
-20
±8
-5
-4
-20
V
V
A
A
A
W
W/°C
°C
°C
Units
THERMAL DATA
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient
Max.
Value
62.5
Unit
°C/W
2/10/2005 Rev.2.01
www.SiliconStandard.com
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