SSM2310GN
N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BV
DSS
R
DS(ON)
I
D
DESCRIPTION
The SSM2310GN acheives fast switching performance
with low gate charge without a complex drive circuit. It
is suitable for low voltage applications such as DC/DC
converters and general load-switching circuits.
The SSM2310GN is supplied in an RoHS-compliant
SOT-23-3 package, which is widely used for lower
power commercial and industrial surface mount
applications.
60V
90mΩ
3A
Pb-free; RoHS-compliant SOT-23-3
D
S
SOT-23-3
G
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
STG
T
J
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
3,
T
A
= 25°C
T
A
= 70°C
Pulsed drain current
1,2
Total power dissipation , T
A
= 25°C
Linear derating factor
Storage temperature range
Operating junction temperature range
3
Value
60
±
20
3
2.3
10
1.38
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
THERMAL CHARACTERISTICS
Symbol
R
ΘJA
Parameter
Maximum thermal resistance, junction-ambient
3
Value
90
Units
°C/W
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
3.Mounted on a square inch of copper pad on FR4 board ; 270°C/W when mounted on the minimum pad area required for soldering.
10/16/2005 Rev.3.1
www.SiliconStandard.com
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SSC [ SILICON STANDARD CORP. ]
