SSM2312GN
N-channel Enhancement-mode Power MOSFET
Low gate-charge
Simple drive requirement
Fast switching
Pb-free; RoHS compliant.
D
BV
DSS
R
DS(ON)
I
D
20V
50mΩ
4.3A
G
S
DESCRIPTION
The SSM2312GN is in a SOT-23-3 package, which is widely used for lower
power commercial and industrial surface mount applications. This device is
suitable for low-voltage applications such as DC/DC converters and and
general switching applications.
D
S
SOT-23-3
G
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
GS
I
D
@ T
A
=25°C
I
D
@ T
A
=70°C
I
DM
P
D
@ T
A
=25°C
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1,2
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
20
±
12
4.3
3.4
10
1.38
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
THERMAL DATA
Symbol
R
ΘJA
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
90
Unit
°C/W
4/16/2005 Rev.2.1
www.SiliconStandard.com
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SSC [ SILICON STANDARD CORP. ]
