SSM4224M
DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Low on-resistance
Simple drive requirement
Dual N-MOSFET package
D1
D2
D1
D2
BV
DSS
R
DS(ON)
I
D
G2
S2
30V
14mΩ
10A
SO-8
S1
G1
Description
Advanced power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D1
D2
G1
S1
G2
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
A
=25°C
I
D
@ T
A
=70°C
I
DM
P
D
@ T
A
=25°C
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
±20
10
8
30
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
3
Max.
Value
62.5
Unit
°C/W
Rev.1.01 4/06/2004
www.SiliconStandard.com
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