SSM4409GEM
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
PRODUCT SUMMARY
Simple Drive Requirement
Low On-resistance
Fast Switching Characteristic
RoHS Compliant
D
D
D
D
BV
DSS
R
DS(ON)
G
S
-35V
7.5mΩ
-14.5A
SO-8
S
S
I
D
DESCRIPTION
The Advanced Power MOSFETs from Silicon Standard Corp.
provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such as
DC/DC converters.
D
G
S
Pb-free; RoHS-compliant
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3a
Continuous Drain Current
3a
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
-35
±20
-14.5
-12
-50
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
THERMAL DATA
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
3a
Max
Value
50
Unit
℃/W
08/04/2007 Rev.1.00
www.SiliconStandard.com
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