SSM4513M/GM
N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Simple drive requirement
Low on-resistance
D1
D2
D1
D2
N-CH
BV
DSS
R
DS(ON)
I
D
35V
36m
Ω
5.8A
-35V
68m
Ω
-4.3A
Fast switching performance
SO-8
S1
G1
G2
S2
P-CH BV
DSS
R
DS(ON)
Description
Advanced Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching, ruggedized
device design, low on-resistance and cost-effectiveness.
G1
I
D
D1
D2
G2
S1
S2
The SSM4513M is in the SO-8 package, which is widely
preferred for commercial and industrial surface mount applications,
and is well-suited for most low voltage applications.
This device is available with Pb-free lead finish (second-level interconnect) as SSM4513GM.
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
A
=25°C
I
D
@ T
A
=70°C
I
DM
P
D
@ T
A
=25°C
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
3
Rating
N-channel
35
±20
5.8
4.7
20
2.0
0.016
-55 to 150
-55 to 150
P-channel
-35
±20
-4.3
-3.4
-20
Units
V
V
A
A
A
W
W/°C
°C
°C
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
3
Max.
Value
62.5
Unit
°C/W
10/12/2004 Rev.2.01
www.SiliconStandard.com
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