SSM4502GM
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
PRODUCT SUMMARY
D2
D2
D1
D1
G2
N-CH BV
DSS
R
DS(ON)
I
D
S2
G1
20V
18mΩ
8.3A
-20V
45mΩ
-5A
Simple Drive Requirement
Low
Gate Charge
Fast Switching
Performance
P-CH BV
DSS
R
DS(ON)
I
D
SO-8
S1
DESCRIPTION
The advanced power MOSFETs from Silicon Standard Corp.
provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widly preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
D1
D2
Pb-free; RoHS-compliant
G1
S1
G2
S2
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
3
Rating
N-channel
20
±12
8.3
6.5
30
2.0
0.016
-55 to 150
-55 to 150
P-channel
-20
±12
-5
-4
-20
Units
V
V
A
A
A
W
W/℃
℃
℃
THERMAL DATA
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
62.5
Unit
℃/W
02/13/2008 Rev.1.00
www.SiliconStandard.com
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