SSM7002DGU
Dual N-channel Enhancement-mode Power MOSFETs
PRODUCT SUMMARY
BV
DSS
R
DS(ON)
I
D
DESCRIPTION
The SSM7002DG acheives fast switching performance
with low gate charge without a complex drive circuit. It
is suitable for low voltage applications such as DC/DC
converters and general load-switching circuits.
The SSM7002DGU is supplied in a RoHS-compliant
SOT-363 package, which is widely used where board
space is critical and a small footprint is required.
50V
3Ω
250mA
Pb-free; RoHS-compliant SOT-363
G1
S1
D2
D1
SOT-363
S2
G2
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
GS
I
D
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
3,
T
A
= 25°C
Value
50
±
20
250
Units
V
V
mA
I
SD
I
DM
P
D
T
STG
T
J
Source-drain diode current
Pulsed drain current
1,2
Total power dissipation , T
A
= 25°C
T
A
= 75°C
Storage temperature range
Operating junction temperature range
3
115
1.0
200
120
-55 to 150
-55 to 150
mA
A
mW
mW
°C
°C
THERMAL CHARACTERISTICS
Symbol
R
ΘJA
Parameter
Maximum thermal resistance, junction-ambient
3
Value
625
Units
°C/W
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
3.Mounted on FR4 board
11/26/2005 Rev.3.01
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