SSM70T03GH,J
N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BV
DSS
R
DS(ON)
I
D
DESCRIPTION
The SSM70T03 acheives fast switching performance
with low gate charge without a complex drive circuit. It is
suitable for low voltage applications such as DC/DC
converters and general load-switching circuits.
The SSM70T03GH is in a TO-252 package, which is
widely used for commercial and industrial surface-mount
applications.
The through-hole version, the SSM70T03GJ in TO-251,
is available for vertical mounting, where a small footprint
is required on the board, and/or an external heatsink is
to be attached.
These devices are manufactured with an advanced process,
providing improved on-resistance and switching performance.
The devices have a maximum junction temperature rating
of 175°C for improved thermal margin and reliability.
30V
9mΩ
60A
Pb-free; RoHS-compliant TO-251 (IPAK)
and TO-252 (DPAK)
G
G D
S
D
S
TO-251 (suffix J)
TO-252 (suffix H)
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
GS
I
D
I
DM
P
D
E
AS
T
STG
T
J
Parameter
Drain-source
voltage
Gate-source
voltage
Continuous
drain current, T
C
= 25°C
T
C
= 100°C
Pulsed
drain current
1
Total
power dissipation, T
C
= 25°C
Linear
derating factor
Single
pulse avalanche energy
3
Storage
temperature range
Operating
junction temperature range
Value
30
±20
60
43
195
53
0.36
29
-55 to 175
-55 to 175
Units
V
V
A
A
A
W
W/°C
mJ
°C
°C
THERMAL
CHARACTERISTICS
Symbol
R
Θ
JC
R
Θ
JA
Parameter
Maximum thermal resistance, junction-case
Maximum thermal resistance, junction-ambient
Value
2.8
110
Units
°C/W
°C/W
Notes:
1.Pulse width must be limited to avoid exceeding the safe operating area.
2.Pulse width <300us, duty cycle <2%.
3.V
DD
=25V , L=100uH , R
G
=25Ω , I
AS
=24A.
10/16/2005 Rev.3.1
www.SiliconStandard.com
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SSC [ SILICON STANDARD CORP. ]
