SSM7811GM
N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BV
DSS
R
DS(ON)
I
D
DESCRIPTION
The SSM7811GM acheives fast switching performance
with low gate charge without a complex drive circuit. It
is suitable for low voltage applications such as DC/DC
converters and general load-switching circuits.
The SSM7811GM is supplied in an RoHS-compliant
SO-8 package, which is widely used for medium power
commercial and industrial surface mount applications.
25V
12mΩ
11.8A
Pb-free; RoHS-compliant SO-8
D
D
D
D
G
SO-8
S
S
S
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
STG
T
J
Parameter
Drain-source
voltage
Gate-source
voltage
Continuous
drain current, T
C
= 25°C
T
C
= 70°C
Pulsed
drain current
1
Total
power dissipation, T
C
= 25°C
Linear
derating factor
Storage
temperature range
Operating
junction temperature range
Value
25
±12
11.8
9.4
30
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
THERMAL
CHARACTERISTICS
Symbol
R
Θ
JA
Parameter
Maximum thermal resistance, junction-ambient
3
Value
50
Units
°C/W
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
3.Mounted on a square inch of copper pad on FR4 board ; 125°C/W when mounted on the minimum pad area required for soldering.
9/16/2006 Rev.3.01
www.SiliconStandard.com
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SSC [ SILICON STANDARD CORP. ]
