SSM9435K
P-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Simple drive requirement
Low on-resistance
Fast switching
D
S
BV
DSS
R
DS(ON)
I
D
D
-30V
50mΩ
-6A
SOT-223
G
Description
Advanced Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
D
G
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
A
=25°C
I
D
@ T
A
=70°C
I
DM
P
D
@ T
A
=25°C
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
-30
±
25
-6
-4.8
-20
2.7
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient
3
Max.
Value
45
Unit
°C/W
Rev.1.01 5/25/2004
www.SiliconStandard.com
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SSC [ SILICON STANDARD CORP. ]
