SSM9406GM
50
50
T
A
= 25 C
40
o
10V
7.0V
5.0V
4.5V
I
D
, Drain Current (A)
T
A
= 150
o
C
40
I
D
, Drain Current (A)
10V
7.0V
5.0V
4.5V
30
30
20
V
G
= 3.0 V
20
V
G
= 3.0 V
10
10
0
0
1
2
3
4
0
0.0
1.0
2.0
3.0
4.0
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
24
1.6
I
D
=7A
T
A
=25°C
21
1.4
I
D
=9A
V
G
=10V
Normalized R
DS(ON)
R
DS(ON)
(mΩ )
1.2
18
1.0
15
0.8
12
0.6
2
4
6
8
10
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance vs. Gate Voltage
Fig 4. Normalized On-Resistance
vs. Junction Temperature
2
9
1.5
6
I
S
(A)
T
j
=150
o
C
3
T
j
=25
o
C
Normalized V
GS(th)
(V)
1.2
1
0.5
0
0
0
0.2
0.4
0.6
0.8
1
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
3/16/2006 Rev.3.01
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
www.SiliconStandard.com
3 of 5