SSM9575M/GM
P-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Simple drive requirement
Low on-resistance
Fast switching characteristics
D
D
D
D
BV
DSS
R
DS(ON)
I
D
G
-60V
90mΩ
-4A
SO-8
S
S
S
Description
Advanced Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SSM9575M is in the SO-8 package, which is widely preferred for
commercial and industrial surface mount applications, and is well suited
for low voltage applications such as DC/DC converters.
D
G
S
This device is available with Pb-free lead finish (second-level interconnect) as SSM9575GM.
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
A
=25°C
I
D
@ T
A
=100°C
I
DM
P
D
@ T
A
=25°C
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
-60
±
25
-4
-3.2
-20
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
3
Max.
Value
50
Unit
°C/W
12/02/2004 Rev.2.01
www.SiliconStandard.com
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SSC [ SILICON STANDARD CORP. ]
