SSM9620M
P-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Low on-resistance
Capable of 2.5V drive
Fast switching
Simple drive requirement
D
D
D
D
BV
DSS
R
DS(ON)
G
-20V
20mΩ
-9.5A
I
D
SO-8
S
S
S
Description
Power MOSFETs from
Silicon Standard
provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
D
G
S
The SSM9620M is supplied in the SO-8 package, which is
widely
preferred
for commercial and industrial surface-mount applications. This device is well suited
for low voltage applications such as DC/DC converters.
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
A
=25°C
I
D
@ T
A
=70°C
I
DM
P
D
@ T
A
=25°C
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1,2
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
- 20
±12
-9.5
-7.6
-76
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient
Max.
Value
50
Unit
°C/W
Rev.2.02 3/06/2004
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