SSM9973GM
14
10000
f=1.0MHz
V
GS
, Gate to Source Voltage (V)
12
I
D
=3.9A
V
DS
=30V
V
DS
=38V
V
DS
=48V
C (pF)
10
1000
8
Ciss
6
100
4
Coss
Crss
2
0
0
4
8
12
16
20
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thja
)
Duty factor=0.5
10
0.2
0.1
0.1
0.05
I
D
(A)
1
1ms
10ms
0.02
P
DM
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
Rthja=135℃/W
℃
0.01
0.01
Single Pulse
0.1
T
A
=25 C
Single Pulse
0.01
0.1
1
10
100
o
100ms
1s
DC
0.001
1000
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
12/10/2004 Rev.2.03
Fig 12. Gate Charge Waveform
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