SSM9985GM
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
PRODUCT SUMMARY
Low On-Resistance
Fast Switching Speed
Surface Mount Package
D
D
D
D
G
BV
DSS
R
DS(ON)
I
D
S
40V
15mΩ
10A
SO-8
S
S
DESCRIPTION
The advanced power MOSFETs from Silicon Standard Corp.
provide the designer with the best combination of fast
switching, ruggedized device design, ultra low on-resistance
and cost-effectiveness.
D
G
S
Pb-free; RoHS-compliant
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Rating
40
± 20
10
8
48
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
THERMAL
DATA
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient
3
Max.
Value
50
Unit
℃/W
10/31/2007 Rev.1.00
www.SiliconStandard.com
1
SSC [ SILICON STANDARD CORP. ]
