Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
2N5013 thru 2N5015
SFT5013/5 thru SFT5015/5
Symbol
5013
5014
5015
5013
5014
5015
BV
CER
Min
800
900
1000
800
900
1000
5
––
––
––
––
––
––
—
10
30
––
––
––
20
––
––
––
––
––
Max
––
Units
V
Electrical Characteristic
3/
Collector – Emitter Breakdown Voltage
(I
C
= 200 µA
DC
, R
BE
= 1 KΩ)
Collector–Base Breakdown Voltage
(I
C
= 200 µA
DC
)
Emitter–Base Breakdown Voltage
(I
E
= 50 µA
DC
)
Collector Cutoff Current
(V
CB
= 650 V)
(V
CB
= 700 V)
(V
CB
= 760 V)
(V
CB
= 650 V, T
C
= 100°C)
(V
CB
= 700 V, T
C
= 100°C)
(V
CB
= 760 V, T
C
= 100°C)
Emitter Cutoff Current
(V
EB
= 4V)
DC Current Gain
4/
(I
C
= 5 mA
DC
, V
CE
= 10 V
DC
)
(I
C
= 20 mA
DC
, V
CE
= 10 V
DC
)
Collector – Emitter Saturation Voltage
4/
(I
C
= 20 mA
DC
, I
B
= 5 mA
DC
)
Base – Emitter Saturation Voltage
4/
(I
C
= 20 mA
DC
, I
B
= 5 mA
DC
)
Current Gain Bandwidth Product
(I
C
= 20 mA
DC
, V
CE
= 10 V
DC
, f = 20 MHz)
Output Capacitance
(V
CB
= 10 V
DC
, I
E
= 0 A
DC
, f = 1.0 MHz)
5013
5014
5015
5013
5014
5015
5013
5014
5015
BV
CBO
BV
EBO
––
––
12
12
12
100
100
100
20
V
V
I
CBO
µAdc
I
EBO
µA
h
FE
V
CE(Sat)
V
BE(Sat)
f
T
Cob
V
CC
= 125 V
DC
,
I
C
= 100 mA
DC
,
I
B1
= 20 mA
DC
,
I
B2
= 20 mA
DC
td
tr
ts
tf
180
1.6
1.6
1.8
1.0
––
30
200
1200
3000
800
––
Vdc
Vdc
MHz
pF
Delay Time
Rise Time
Storage Time
Fall Time
Case Outline: TO-39
PIN 1: EMITTER
PIN 2: BASE
PIN 3: COLLECTOR
nsec
Case Outline: TO-5
PIN 1: EMITTER
PIN 2: BASE
PIN 3: COLLECTOR
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0043D
DOC
SSDI [ SOLID STATES DEVICES, INC ]
