Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
2N5015
0.5 AMP, 1000 Volts
NPN Transistor
FEATURES:
BVCER 1000 volts
Low Saturation Voltage
Low Leakage at High Temperature
High Gain, Low Saturation
200° C Operating, Gold Eutectic Die Attach
TX, TXV, and S-Level Screening Available
Symbol
Value
Units
DESIGNER’S DATA SHEET
Part Number / Ordering Information
1/
2N50
15
│
│
│
│
│
│
│
│
└
Screening
2/
__
= Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Package
/39 = TO-39
/5 = TO-5
1000V
Family / Voltage
__
│
│
│
│
│
└
__
└
Maximum Ratings
Collector – Emitter Voltage
(R
BE
= 1 kΩ)
Collector – Base Voltage
Emitter – Base Voltage
Collector – Emitter Breakdown Voltage
Peak Collector Current
Peak Base Current
Total Device Dissipation
@ T
C
= 100º C
Derate above 100º C
Operating and Storage Temperature
Thermal Resistance, Junction to Case
Notes:
1/ For ordering information, price, operating curves, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Unless otherwise specified, maximum ratings/electrical characteristics at 25°C.
4/ Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%
V
CER
V
CBO
V
EBO
BV
CEO
I
C
I
B
P
D
T
OP
, T
STG
R
θJC
TO-39
1000
1000
5
450
0.5
250
2.0
20
-65 to +200
50 (typ 22)
V
V
V
V
A
mA
W
mW/ºC
ºC
ºC/W
TO-5
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0043E
DOC
SSDI [ SOLID STATES DEVICES, INC ]
