SDR1D thru SDR1N
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information
1/
SDR1
__ __ __
│ │
└
Screening
│ │
__
= Not Screened
│ │
TX = TX Level
│ │
TXV = TXV
│ │
S = S Level
│ │
│
└
Package Type
__
= Axial Leaded
│
│
D = 200V
K = 800V
└
Family
G = 400V
M = 1000V
J = 600V
N = 1200V
2/
1.0 AMPS
200
─
1200 VOLTS
50 – 80 nsec ULTRA FAST RECTIFIER
•
•
•
•
•
•
•
•
•
FEATURES:
Ultra Fast Recovery:
50-80 ns Max @ 25ºC
4/
80-130 ns Max @ 100ºC
4/
•
Single Chip Construction
PIV to 1200 Volts
Low Reverse Leakage Current
Hermetically Sealed
For High Efficiency Applications
Metallurgically Bonded
2/
TX, TXV, and S-Level Screening Available
Available in Surface Mount (SM) and Square Tab
Surface Mount (SMS) Versions (Ref. RU0003)
Hyper Fast Version available (Ref. RH0119)
MAXIMUM RATINGS
3/
RATING
Peak Repetitive Reverse
Voltage
And
DC Blocking Voltage
Rectified Forward Forward Current
(Resistive Load, 60 Hz, Sine Wave, T
A
= 25ºC)
SYMBOL
SDR1D
SDR1G
SDR1J
SDR1K
SDR1M
SDR1N
VALUE
200
400
600
800
1000
1200
1
25
-65 to +175
45
Axial Leaded
UNIT
V
RRM
V
RWM
V
R
I
O
I
FSM
T
OP
and T
STG
R
θJL
Volts
Amp
Amps
ºC
ºC/W
Peak Surge Current
(8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach
equilibrium between pulses, T
A
= 25ºC)
Operating & Storage Temperature
Thermal Resistance, Junction to Lead, L = 3/8”
NOTES:
1/
2/
3/
4/
5/
For Ordering Information, Price, and Availability- Contact Factory.
Screening Based on MIL-PRF-19500. Screening Flows Available on Request.
Unless Otherwise Specified, All Electrical Characteristics @25ºC.
Recovery Conditions: I
F
= 0.5 Amp, I
R
= 1.0 Amp, I
RR
to .25 Amp.
For information on operating curves, contact factory.
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0005H
DOC
SSDI [ SOLID STATES DEVICES, INC ]
