Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR3KHF & SDR3KHFSMS
thru
SDR3NHF & SDR3NHFSMS
3 AMP
800 - 1200 V
35 nsec
Hyper Fast Rectifier
Axial Lead Diode
SMS
DESIGNER’S DATA SHEET
Features:
•
Hyper Fast Recovery: 35 nsec maximum
•
PIV to 1200 Volts
•
Hermetically Sealed
•
Void Free Construction
•
For High Efficiency Applications
•
Single Chip Construction
•
Low Reverse Leakage
•
TX, TXV, S Level screening Available
Maximum Ratings
Symbol
Value
Units
Peak Repetitive Reverse and DC Blocking Voltage
SDR3KHF
SDR3MHF
SDR3NHF
V
RRM
V
RSM
V
R
Io
I
FSM
T
OP
& T
STG
800
1000
1200
3.0
70
-65 to +175
20
14
Volts
Amps
Amps
ºC
ºC/W
Average Rectified Forward Current
(Resistive Load, 60 hz Sine Wave, T
A
= 25
°C
)
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, T
A
= 25
°C
)
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Leads, L = 3/8
Junction to Tabs
R
?JE
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0097A
DOC