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SFF130/5 参数 Datasheet PDF下载

SFF130/5图片预览
型号: SFF130/5
PDF下载: 下载PDF文件 查看货源
内容描述: 8 AMP / 100伏特0.18OHM N沟道功率MOSFET [8 AMP / 100 Volts 0.18OHM N-Channel POWER MOSFET]
分类和应用:
文件页数/大小: 2 页 / 173 K
品牌: SSDI [ SOLID STATES DEVICES, INC ]
 浏览型号SFF130/5的Datasheet PDF文件第2页  
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFF130/5
8 AMP / 100 Volts
0.18
N-Channel Power MOSFET
Features:
Rugged Construction with Poly Silicon Gate
Low R
DS(ON)
and High Transconductance
Excellent High Temperature Stability
Very Fast Switching Speed
Fast Recovery and Superior dV/dt Performance
Increased Reverse Energy Capability
Low Input and Transfer Capacitance for Easy Paralleling
Hermetically Sealed Package
Available in both hot case and isolated versions
Ideal for low power applications
TX, TXV, Space Level Screening Available
2/
Replacement for IRFF130 Types
DESIGNER’S DATA SHEET
Part Number / Ordering Information
SFF130 __ __
1/
│ └
Screening
2/
__
= Not Screen
TX = TX Level
TXV = TXV Level
S = S Level
Package
/5= TO-5
TO-5
Maximum Ratings
3/
Drain – Source Voltage
Gate – Source Voltage
Continuous Collector Current
Power Dissipation
Operating & Storage Temperature
Thermal Resistance
Junction to Case
Single Pulse Avalanche Energy
NOTES:
1/
For Ordering Information, Price, Operating
Curves, and Availability- Contact Factory.
2/
Screened to MIL-PRF-19500.
3/
Unless Otherwise Specified, All Maximum
Ratings and Electrical Characteristics @25ºC.
TO-5 Case Outline:
Symbol
V
DS
V
GS
T
C
= 25ºC
T
C
= 100ºC
T
C
= 25ºC
T
A
= 25ºC
I
D
P
D
Top & Tstg
R
θJC
E
AS
Value
100
±20
8
5
25
19
-55 to +150
5
75
Units
Volts
Volts
Amps
Watts
ºC
ºC/W
mJ
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00019D
DOC