PRELIMINARY
SOLID STATE DEVICES, INC.
14830 Valley View Av. * La Mirada, Ca 90670
Phone: (562) 404-7855 * Fax: (562) 404-1773
SFF1310M
SFF1310Z
40 AMPS
200 VOLTS
0.050
S
N-CHANNEL
POWER MOSFET
TO-3
DESIGNER'S DATA SHEET
FEATURES:
• Rugged construction with polysilicon gate
• Low RDS (on) and high transconductance
• Excellent high temperature stability
• Very fast switching speed
• Fast recovery and superior dv/dt performance
• Increased reverse energy capability
• Low input and transfer capacitance for easy paralleling
• Hermetically sealed package
• TX, TXV, and Space Level screening available
• Replaces: SMM40N20 Type
MAXIMUM RATINGS
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current
Operating and Storage Temperature
Thermal Resistance, Junction to Case
Total Device Dissipation
@ TC = 25
o
C
@ TC = 55
o
C
SYMBOL
V
DS
V
GS
I
D
T
op
& T
stg
R
2JC
P
D
VALUE
200
±20
40
-55 to +150
0.5
250
190
o
UNIT
Volts
Volts
Amps
o
C
C/W
Watts
PACKAGE OUTLINE: TO-3
PIN OUT:
DRAIN:
SOURCE:
GATE:
PIN 1
PIN 2
PIN 3
NOTE:
All specifications are subject to change without notification.
SCDs for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0004A