Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFF24N50/3
SFF24N50/3T
24 AMP / 500 Volts
0.2
Ω
N-Channel
Power MOSFET
TO-3
DESIGNER’S DATA SHEET
Features:
•
•
•
•
•
•
•
•
•
•
Rugged Construction with Polysilicon Gate Cell
Low R
DS(ON)
and High Transconductance
Excellent High Temperature Stability
Very Fast Switching Speed
Fast Recovery and Superior dV/dt Performance
Increased Reverse Energy Capability
Low Input and Transfer Capacitance for Easy Paralleling
Hermetically Sealed Surface Mount Power Package
TX, TXV, Space Level Screening Available
Replacement for IXTH24N50 Types
Maximum Ratings
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current (Tj limited)
Avalanche Current
Avalanche Energy
Operating & Storage Temperature
Thermal Resistance, Junction to Case
Total Device Dissipation @ TC=25ºC
Total Device Dissipation @ TC=55ºC
Package Outline: TO-3
Pin Out:
Pin 1: GATE
Pin 2: SOURCE
Pin 3: DRAIN
Notes:
1.
P/N: SFF 24N50/3:
Pin Diameter : 0.043”
0.038”
2.
P/N: SFF24N50/3T:
Pin Diameter: 0.063”
0.058”
Ø.875
MAX
2x Ø.165
.151
SEATING PLANE
Symbol
V
DS
V
GS
I
D
Repetitive
Repetitive
Single Pulse
I
AR
E
AR
E
AS
Top & Tstg
R
θJC
PD
Value
500
±20
24
21
1
690
-55 to +150
0.75
(typ 0.6)
167
126
.675
.655
Units
Volts
Volts
Amps
Amps
mJ
ºC
ºC/W
WATTS
.135 MAX
.525 MAX
2x R.188 MAX
2x .043
.038
.440
.420
2
2x .225
.205
1
.450
.250
2x .312 MIN
1.197
1.177
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00175E
DOC
SSDI [ SOLID STATES DEVICES, INC ]
