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SFF24N50Z 参数 Datasheet PDF下载

SFF24N50Z图片预览
型号: SFF24N50Z
PDF下载: 下载PDF文件 查看货源
内容描述: 24 AMP / 500伏特, 0.2欧姆的N沟道功率MOSFET [24 AMP / 500 Volts 0.2 OHM N-Channel POWER MOSFET]
分类和应用: 晶体晶体管功率场效应晶体管开关局域网
文件页数/大小: 3 页 / 54 K
品牌: SSDI [ SOLID STATES DEVICES, INC ]
 浏览型号SFF24N50Z的Datasheet PDF文件第2页浏览型号SFF24N50Z的Datasheet PDF文件第3页  
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFF24N50M
SFF24N50Z
DESIGNER’S DATA SHEET
Part Number / Ordering Information
SFF24N50 __ __ __
1/
¦ ¦ +
Screening
2/
__
= Not Screen
¦ ¦
TX = TX Level
¦ ¦
TXV = TXV Level
¦ ¦
S = S Level
¦ ¦
¦ +
Lead Option
3/
__
= Straight Leads
¦
DB = Down Bend
¦
UB = Up Bend
¦
+
Package
3/
M = TO-254
24 AMP / 500 Volts
0.2
N-Channel MOSFET
Features:
Rugged Construction with Polysilicon Gate Cell
Low R
DS(ON)
and High Transconductance
Excellent High Temperature Stability
Very Fast Switching Speed
Fast Recovery and Superior dV/dt Performance
Increased Reverse Energy Capability
Low Input and Transfer Capacitance for Easy Paralleling
Ceramic Seals for Improved Hermeticity
Hermetically Sealed Surface Mount Power Package
TX, TXV, Space Level Screening Available
Replacement for IXTH24N50 Types
Z = TO-254Z
Maximum Ratings
Drain – Source Voltage
Gate – Source Voltage
Continuous Collector Current
Avalanche Current
Avalanche Energy
Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Case
TO-254 (M)
TO-254Z (Z)
Symbol
V
DS
V
GS
I
D
Repetitive
Repetitive
Single Pulse
T
C
= 25ºC
T
C
= 55ºC
I
AR
E
AR
E
AS
P
D
Top & Tstg
R
θJC
Value
500
±20
24
21
1
690
150
114
-55 to +150
0.83
Units
Volts
Volts
Amps
Amps
mJ
W
ºC
ºC/W
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00165F
DOC