Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFF250M
SFF250Z
30 AMP / 200 Volts
0.060
Ω
typical
N-Channel POWER MOSFET
Features:
Rugged Construction with Polysilicon Gate Cell
Low R
DS(ON)
and High Transconductance
Excellent High Temperature Stability
Very Fast Switching Speed
Fast Recovery and Superior dV/dt Performance
Increased Reverse Energy Capability
Low Input and Transfer Capacitance for Easy Paralleling
Ceramic Seals Available for Improved Hermeticity
Hermetically Sealed Surface Mount Power Package
TX, TXV, Space Level Screening Available
Replacement for IRFM250 Types
DESIGNER’S DATA SHEET
Part Number / Ordering Information
SFF250
__ __ __
│
│
│
│
│
│
│
│
│
└
1/
│ └
Screening
2/
__
= Not Screen
│
TX = TX Level
│
TXV = TXV Level
│
S = S Level
│
└
Lead Option
3/
__
= Straight Leads
DB = Down Bend
UB = Up Bend
Package
3/
M = TO-254
Z = TO-254Z
•
•
•
•
•
•
•
•
•
•
•
Maximum Ratings
Drain – Source Voltage
Gate – Source Voltage
Continuous Collector Current
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Case
Total Device Dissipation
TO-254 (M)
Symbol
V
DS
V
GS
I
D
Top & Tstg
R
θJC
T
C
= 25ºC
T
C
= 55ºC
TO-254Z (Z)
Value
200
±20
30
-55 to +150
1
125
95
Units
Volts
Volts
Amps
ºC
ºC/W
W
P
D
For Pin Out Configuration and Optional Lead Bend, See Page 3.
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00049E
DOC
SSDI [ SOLID STATES DEVICES, INC ]
