PRELIMINARY
SOLID STATE DEVICES, INC.
14830 Valley View Av. * La Mirada, Ca 90670
Phone: (562) 404-7855 * Fax: (562) 404-1773
SFF50N20M
SFF50N20Z
50 AMPS
200 VOLTS
0.055
S
N-CHANNEL
POWER MOSFET
TO-254 (M)
TO-254Z (Z)
DESIGNER'S DATA SHEET
FEATURES:
Rugged construction with polysilicon gate
Low RDS (on) and high transconductance
Excellent high temperature stability
Very fast switching speed
Fast recovery and superior dv/dt performance
Increased reverse energy capability
Low input and transfer capacitance for easy paralleling
Hermetically sealed package
TX, TXV, and Space Level screening available
Replaces: IXTH50N20 Types
MAXIMUM RATINGS
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current
Operating and Storage Temperature
Thermal Resistance, Junction to Case
Total Device Dissipation
CASE OUTLINE: TO-254 (Sufix M)
@ TC = 25
o
C
@ TC = 55
o
C
SYMBOL
V
DS
V
GS
I
D
T
op
& T
stg
R
2JC
P
D
VALUE
200
±20
50
-55 to +150
0.83
150
114
o
UNIT
Volts
Volts
Amps
o
C
C/W
Watts
CASE OUTLINE: TO-254Z (Sufix Z)
NOTE:
All specifications are subject to change without notification.
SCDs for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00129E
SSDI [ SOLID STATES DEVICES, INC ]
