Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4470 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFF60P05M
SFF60P05Z
-60 AMP/-50 Volts
25 m typical
P-Channel
POWER MOSFET
Features:
Rugged Construction with Poly Silicon Gate
Low RDS(on) and High Transconductance
Excellent High Temperature Stability
Very Fast Switching Speed
Fast Recovery and Superior dv/dt Performance
Increased Reverse Energy Capability
Low Input and Transfer Capacitance for Easy
Paralleling
Hermetically Sealed
TX, TXV, and Space Level Screening Available.
Consult Factory.
DESIGNER’S DATA SHEET
Part Number / Ordering Information
1/
SFF60P05
__ __ __
│
└
│
Screening
2/
│
│
__ = Not Screened
TX = TX Level
│
│
TXV = TXV Level
│
│
S = S Level
│
│
Lead Option
└
│
__ = Straight Leads
│
DB = Down Bend
│
UB = Up Bend
│
Package
3/
└
M = TO-254
Z = TO-254Z
Maximum Ratings
4/
Drain - Source Voltage
Gate – Source Voltage
Continuous Drain Current
Operating & Storage Temperature
Thermal Resistance, Junction to Case
Total Device Power Dissipation
T
C
= 25ºC
T
C
= -55ºC
Symbol
V
DS
V
GS
I
D
T
OP
& T
STG
R
JC
P
D
Value
-50
+20
-60
-55 to +150
0.8
156
118
Units
V
V
A
ºC
ºC/W
Watts
NOTES:
TO-254 (M)
TO-254Z (Z)
*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For ordering information, price, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Maximum current limited by package configuration.
o
4/ Unless otherwise specified, all electrical characteristics @25 C.
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FP0045E
DOC