SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
SFF75N05M
SFF75N05Z
75 AMP
50 VOLTS
15m
Ω
N-CHANNEL
MOSFET
TO-254 (M)
TO-254Z (Z)
DESIGNER'S DATA SHEET
FEATURES:
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Advanced high-cell density withstands high energy
Very low conduction and switching losses
Fast recovery drain-to-source diode with soft recovery
Rugged construction with poly silicon gate
Ultra low RDS (on) and high transconductance
Excellent high temperature stability
Very fast switching speed
Fast recovery and superior dv/dt performance
Increased reverse energy capability
Low input and transfer capacitance for easy paralleling
Hermetically sealed package
TX, TXV and Space Level screening available
MAXIMUM RATINGS
CHARACTERISTIC
Drain to Source Voltage
Drain to Gate Voltage (RGS = 1.0 m
Ω)
Gate to Source Voltage
Continuous Drain Current
Operating and Storage Temperature
Thermal Resistance, Junction to Case
Total Device Dissipation
@ TC = 25
o
C
@ TC = 55
o
C
@TC=25
o
C
@TC=100
o
C
SYMBOL
V
DS
V
DG
V
GS
I
D
T
op
& T
stg
R
0JC
P
D
VALUE
50
50
+ 20
56
1/
46
-55 to +175
1
150
120
UNIT
Volts
Volts
Volts
Amps
o
C
o
C/W
Watts
CASE OUTLINE: TO-254 (Sufix M)
Pin Out:
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
CASE OUTLINE: TO-254Z (Sufix Z)
Pin Out:
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
Available with Glass or Ceramic Seals. Contact Facory for details.
NOTE:
All specifications are subject to change without notification.
SCDs for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00257E