PRELIMINARY
SFF9130-28D
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
DESIGNER'S DATA SHEET
FEATURES:
• Rugged construction with poly silicon gate
• Low RDS (on) and high transconductance
• Excellent high temperature stability
• Very fast switching speed
• Fast recovery and superior dv/dt performance
• Increased reverse energy capability
• Low input transfer capacitance for easy paralleling
• Hermetically sealed surface mount package
• TX, TXV and Space Level screening available
• Replaces: 2x IRF9130 Types
MAXIMUM RATINGS
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current
Operating and Storage Temperature
Thermal Resistance, Junction to Case
(Both)
Total Device Dissipation
T
C
= 25
o
C
T
C
= 55
o
C
T
C
= 25
o
C
T
C
= 100
o
C
-11 AMP
-100 VOLTS
0.30S
DUAL UNCOMMITED
P-CHANNEL POWER MOSFET
28 PIN CLCC
SYMBOL
V
DS
V
GS
I
D
T
op
& T
stg
R
2JC
P
D
E
AS
E
AR
VALUE
-100
±20
-11
-7
-55 to +150
3.5
36
37
84
7.5
UNIT
Volts
Volts
Amps
o
C
o
C/W
Watts
mJ
mJ
Single Pulse Avalange Energy
Repetitive Avalange Energy
PACKAGE OUTLINE: 28 PIN CLCC
PIN OUT:
SOURCE (1): 16 - 21
DRAIN (1): 24 - 28
GATE (1):
22
SOURCE (2): 9 - 14
DRAIN (2): 2 - 6
GATE (2):
8
NOTE:
All drain/source pins must be connected on
the PC board in order to maximize current
carrying capability and to minimize RDS (on)
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FP0035D
SSDI [ SOLID STATES DEVICES, INC ]
