Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFF9140J
-18 AMPS
-100 VOLTS
0.20
Ω
P-CHANNEL
POWER MOSFET
TO-257
Designer’s Data Sheet
FEATURES:
•
•
•
•
•
•
•
•
•
Rugged Construction with Poly Silicon Gate
Low RDS(on) and High Transconductance
Excellent High Temperature Stability
Very Fast Switching Speed
Fast Recovery and Superior dv/dt Performance
Increased Reverse Energy Capability
Low Input and Transfer Capacitance for Easy
Paralleling
Hermetically Sealed
Replaces: IRF9140 Types
TX, TXV, and Space Level Screening Available.
Consult Factory.
•
MAXIMUM RATINGS
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current
Operating and Storage Temperature
Thermal Resistance, Junction to Case
Total Device Dissipation
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
PACKAGE OUTLINE:
TO-257 (J)
PINOUT:
PIN 1: DRAIN
PIN 2: SOURCE
PIN 3: GATE
Symbol
V
DS
V
GS
T
C =
25
o
C
T
C =
100
o
C
I
D
T
OP
& T
stg
R
θJC
T
C =
25
o
C
T
C =
55
o
C
P
D
E
AS
E
AR
Value
-100
±20
-18
-11
-55 to +150
2.0
63
48
500
12.5
Units
Volts
Volts
Amps
o
o
C
C/W
Watts
mJ
mJ
SUFFIX JDB
SUFFIX JUB
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FP0015G
DOC