SFS2510 thru SFS2540
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
FEATURES:
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Low-Level Gate Characteristics
I
GT
= 200 µA (Max) @ 25
o
C
Low Holding Current I
H
= 1 mA (Max) @ 25
o
C
Anode Common to Case
Hermetically Sealed
TX, TXV, S-Level Screening Available. Consult
Factory
25 AMPS
100
─
400 VOLTS
FAST SWITCHING
SILICON CONTROLLED
RECTIFIER
TO-48
MAXIMUM RATINGS
(T
J
= 25 C UNLESS OTHERWISE NOTED, R
GK
= 1K
Ω)
o
Symbol
V
DRM
V
RRM
Value
100
200
250
300
400
150
300
350
400
500
35
25
Units
Peak Repetitive Reverse Voltage
and DC Blocking Voltage
Non-Repetitive Peak Reverse Blocking Voltage
(t
≤
5.0 ms)
RMS On-State Current
(All Conduction Angles)
Average On-State Current
Peak Non-Repetitive Surge Current
(One Cycle, 60 Hz, T
J
= 120
o
C, t = 8.3 ms)
Peak Gate Power
Average Gate Power
Peak Gate Current
Peak Gate Voltage
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Case
SFS2510
SFS2520
SFS2525
SFS2530
SFS2540
SFS2510
SFS2520
SFS2525
SFS2530
SFS2540
Volts
V
RSM
Volts
I
T (RMS)
T
C
= 50
o
C
I
T (AV)
I
TSM
P
GM
P
G (AV)
I
GM
V
GM
T
J
Tstg
R
θJC
Amps
Amps
Amps
Watts
Watts
Amps
Volts
o
o
o
210
60
1.0
10
15
-65 to +135
-65 to +150
1.45
C
C
C/W
SSDI [ SOLID STATES DEVICES, INC ]
