SPMQ496-01
PRELIMINARY
14005 Stage Road * Santa Fe Springs, Ca 90670
Phone: (562) 404-4474 * Fax: (562) 404-1773
SOLID STATE DEVICES, INC.
ELECTRICAL CHARACTERISTICS @ T
J
=25
o
C
(Unless Otherwise Specified)
RATING
SYMBOL
MIN
MAX
UNIT
Collector - Emitter Breakdown Voltage
(I
CES
= 250:A, V
GE
= 0V)
Gate - Emitter Threshold Voltage
(I
C
= 5mA, V
CE
= V
GE
)
Collector-Emitter Saturation Voltage
(I
C
= 200A, V
GE
= 15V)
Gate-Emitter Leakage Current
(V
GE
=
"20V,
V
CE
= 0V)
Collector Leakage Current
(V
CE
= 480V, V
GE
= 0V)
Anti-Parallel Diode Forward Voltage
(I
F
= 200A, T
B
= 25
o
C)
(T
B
= 25
o
C)
(T
B
= 90
o
C)
BV
CES
V
GE(th)
V
CE(sat)2
V
CE(sat)1
I
GES
(T
B
= 25
o
C)
(T
B
= 125
o
C)
I
CES1
I
CES1
V
F
R
INSUL1
600
2.0
-
-
-
-
-
-
1
-
6
3.1
2.5
2.0
225
20
1.6
-
Volts
Volts
Volts
:Amps
:Amps
mAmps
Volts
GS
Insulation Resistance
(All terminals to Base @1500V)
PACKAGE OUTLINE: ASPM
Tolerances
(Unless specified):
.XX
".03
.XXX
".010