PRELIMINARY
SSR10C120CT Series
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number / Ordering Information
1/
SSR10C __ __ __ __
│ │ │ └
Screening
__
= Not Screened
│ │ │
TX = TX Level
TXV = TXV
│ │ │
S = S Level
│ │ │
2/
│ │ └
Package
G = Cerpack
│ │
│ └
Configuration
CT = Centertap
│
└
Voltage
100 = 1000 V
120 = 1200 V
10 A / 1200 V
Schottky Silicon Carbide
Centertap Rectifier
FEATURES:
•
•
•
•
•
•
•
1200 Volt Silicon Carbide Schottky Rectifier
Average Output Current 10 Amps
No Reverse Recovery
No Forward Recovery
No Switching Time Change Over
Temperature
Small Package Size
TX, TXV, and Space Level Screening
Available. Consult Factory.
MAXIMUM RATINGS
Peak Repetitive and Peak Reverse Voltage
Average Rectified Forward Current
(Resistive Load, 60 Hz, Sine Wave)
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, T
A
= 25
o
C)
Operating & Storage Temperature
Junction Temperature
Maximum Thermal Resistance
(Junction to Case)
CERPACK (G)
SSR10C100CT
SSR10C120CT
Per Leg
Total
Symbol
V
RRM
V
R
I
O
I
FSM
T
OP
& T
stg
T
J
R
θJC
Value
1000
1200
5
10
60
-55 to +250
-55 to +250
1.5
Units
Volts
Amps
Amps
o
o
o
C
C
C/W
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: SH0029C
DOC
SSDI [ SOLID STATES DEVICES, INC ]
