Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
World’s First Silicon Carbide
SSR10C30 Series
DESIGNER’S DATA SHEET
Part Number / Ordering Information
1/
SSR10C 30
│
│
│
│
│
│
│
│
└
S.5 TX
│ │
└
Screening __
= Not Screened
│ │
TV = TX Level
│ │
TXV= TXV Level
│ │
S = S Level
2/
│ └
Package
S.5
= SMD.5
│
G = Cerpack
└
Configuration
10A / 300V
Schottky Silicon Carbide
Features:
•
•
•
•
•
•
•
World's 1st Hermetic 10A SiC
High Voltage 300V
Very High Operating Temperature, 250ºC
No Recovery Time (tfr or trr)
High Current Operation, 10A
Hermetic Packaging
TX, TXV, S Level screening available
Voltage
20
= 200 V
30 = 300 V
Maximum Ratings
Symbol
Value
Units
Peak Repetitive and Peak Surge Reverse Voltage
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave)
Non Repetitive Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on I
O
)
Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Case
Cerpack (G)
SSR10C20
SSR10C30
V
RRM
V
RSM
Io
I
FSM
P
D
Top & Tstg
R
θJC
200
300
10
18
15
-55 to +250
4.4
Volts
Amps
Amps
Watts
ºC
ºC/W
1
SMD .5 (S.5)
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0032B
DOC
SSDI [ SOLID STATES DEVICES, INC ]
