Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SSR30C100S1
&
SSR30C120S1
30 A / 1200 V
Schottky Silicon Carbide
Rectifier
Designer’s Data Sheet
Part Number / Ordering Information
1/
SSR30C __
│
│
└
Screening
2/
__
= Not Screened
│
│
TX = TX Level
TXV = TXV
│
│
S = S Level
│
│
│
└
Package
S1 = SMD1
│
└
Voltage
100 = 1000 V
120 = 1200 V
__
__
FEATURES:
•
•
•
•
•
•
•
1200 Volt Silicon Carbide Schottky Rectifier
Average Output Current 30 Amps
No Reverse Recovery
No Forward Recovery
No Switching Time Change Over
Temperature
Small Package Size
TX, TXV, and Space Level Screening
Available.
2/
Consult Factory.
SMD1
MAXIMUM RATINGS
3/
Peak Repetitive and Peak Reverse Voltage
Average Rectified Forward Current
4/
(Resistive Load, 60 Hz, Sine Wave)
Peak Surge Current
4/
(8.3 ms Pulse, Half Sine Wave, T
A
= 25
o
C)
Operating & Storage Temperature
Junction Temperature
Maximum Thermal Resistance
4/
(Junction to Case)
Total
SSR30C100S1
SSR30C120S1
Total
Total
Symbol
V
RRM
V
R
I
O
I
FSM
T
OP
& T
stg
T
J
R
θJC
Value
1000
1200
30
120
-55 to +250
-55 to +250
0.8
Units
Volts
Amps
Amps
o
o
o
C
C
C/W
NOTES:
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screened to MIL-PRF-19500.
3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC
4/ Terminal Pads 1 & 3 Must be connected together for testing and at the Board Level.
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: SH0043B
DOC