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ES1A 参数 Datasheet PDF下载

ES1A图片预览
型号: ES1A
PDF下载: 下载PDF文件 查看货源
内容描述: 表面装载超快速开关整流器 [SURFACE MOUNT SUPER FAST SWITCHING RECTIFIER]
分类和应用: 二极管开关光电二极管
文件页数/大小: 1 页 / 19 K
品牌: SSE [ SHANGHAI SUNRISE ELECTRONICS ]
   
SHANGHAI SUNRISE ELECTRONICS CO., LTD.
ES1A THRU ES1G
SURFACE MOUNT SUPER
FAST SWITCHING RECTIFIER
VOLTAGE: 50 TO 400V CURRENT: 1.0A
FEATURES
• Ideal for surface mount pick and
place application
• Low profile package
• Built-in strain relief
• High surge capability
• Glass passivated chip
• Super fast recovery for high efficiency
• High temperature soldering guaranteed:
260
o
C/10sec/at terminal
TECHNICAL
SPECIFICATION
SMA/DO-214AC
B
A
C
D
F
G
H
MECHANICAL DATA
• Terminal: Plated leads solderable per
MIL-STD 202E, method 208C
• Case: Molded with UL-94 Class V-O
recognized flame retardant epoxy
• Polarity: Color band denotes cathode
A
B
C
D
MAX. .110(2.79) .177(4.50) .058(1.47) .012(0.305)
MIN. .100(2.54) .157(3.99) .052(1.32) .006(0.152)
E
F
G
H
MAX. .208(5.28) .090(2.29) .008(0.203) .060(1.52)
MIN. .194(4.93) .078(1.98) .004(0.102) .030(0.76)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25
o
C, unless otherwise stated, for capacitive load,
derate current by 20%)
RATINGS
SYMBOL
ES1A ES1B ES1C ES1D ES1E ES1G
UNITS
300
210
300
400
280
400
V
V
V
A
A
1.25
V
µA
µA
nS
pF
o
V
RRM
Maximum Repetitive Peak Reverse Voltage
50
100
150
200
V
RMS
Maximum RMS Voltage
35
70
105
140
V
DC
Maximum DC Blocking Voltage
50
100
150
200
Maximum Average Forward Rectified Current
I
F(AV)
1.0
(T
L
=110
o
C)
Peak Forward Surge Current (8.3ms single
I
FSM
30
half sine-wave superimposed on rated load)
Maximum Instantaneous Forward Voltage
V
F
0.95
(at rated forward current)
5.0
Maximum DC Reverse Current
T
a
=25
o
C
I
R
o
200
(at rated DC blocking voltage)
T
a
=100 C
35
Maximum Reverse Recovery Time (Note 1)
trr
10
C
J
Typical Junction Capacitance
(Note 2)
40
Typical Thermal Resistance
(Note 3) R
θ
(ja)
-50 to +150
Storage and Operation Junction Temperature T
STG
,T
J
Note:
1.Reverse recovery condition I
F
=0.5A, I
R
=1.0A,Irr=0.25A.
2.Measured at 1.0 MHz and applied voltage of 4.0V
dc
3.Thermal resistance from junction to terminal mounted on 5×5mm copper pad area
C/W
o
C
http://www.sse-diode.com