SHANGHAI SUNRISE ELECTRONICS CO., LTD.
ES2A THRU ES2G
SURFACE MOUNT SUPER
FAST SWITCHING RECTIFIER
VOLTAGE: 50 TO 400V CURRENT: 2.0A
FEATURES
• Ideal for surface mount pick and
place application
• Low profile package
• Built-in strain relief
• High surge capability
• Glass passivated chip
• Super fast recovery for high efficiency
• High temperature soldering guaranteed:
260
o
C/10sec/at terminal
TECHNICAL
SPECIFICATION
SMB/DO-214AA
B
A
C
D
F
G
A
B
MAX. .155(3.94) .180(4.57)
MIN. .130(3.30) .160(4.06)
E
F
MAX. .220(5.59) .096(2.44)
MIN. .205(5.21) .084(2.13)
H
C
D
.083(2.11) .012(0.305)
.077(1.96) .006(0.152)
G
H
.008(0.203) .060(1.52)
.004(0.102) .030(0.76)
MECHANICAL DATA
• Terminal: Plated leads solderable per
MIL-STD 202E, method 208C
• Case: Molded with UL-94 Class V-O
recognized flame retardant epoxy
• Polarity: Color band denotes cathode
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25
o
C, unless otherwise stated, for capacitive load,
derate current by 20%)
RATINGS
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
(T
L
=110
o
C)
SYMBOL
ES2A ES2B ES2C ES2D ES2E ES2G
UNITS
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
150
105
150
2.0
200
140
200
300
210
300
400
280
400
V
V
V
A
Peak Forward Surge Current (8.3ms single
I
FSM
50
half sine-wave superimposed on rated load)
Maximum Instantaneous Forward Voltage
V
F
0.95
(at rated forward current)
5.0
Maximum DC Reverse Current
T
a
=25
o
C
I
R
o
350
(at rated DC blocking voltage)
T
a
=100 C
35
Maximum Reverse Recovery Time (Note 1)
trr
25
C
J
Typical Junction Capacitance
(Note 2)
20
Typical Thermal Resistance
(Note 3) R
θ
(ja)
-50 to +150
Storage and Operation Junction Temperature T
STG
,T
J
Note:
1.Reverse recovery condition I
F
=0.5A, I
R
=1.0A,Irr=0.25A.
2.Measured at 1.0 MHz and applied voltage of 4.0V
dc
3.Thermal resistance from junction to terminal mounted on 5×5mm copper pad area
A
1.25
V
µA
µA
nS
pF
o
C/W
o
C
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