SHANGHAI SUNRISE ELECTRONICS CO., LTD.
IN4148
SILICON EPITAXIAL PLANAR
SWITCHING DIODE
REVERSE VOLTAGE: 75V
FORWARD CURRENT: 150mA
FEATURES
• Small glass structure ensures high reliability
• Fast switching
• Low leakage
• High temperature soldering guaranteed:
250
o
C/10S/9.5mm lead length
at 5 lbs tension
TECHNICAL
SPECIFICATION
DO - 35
1.0 (25.4)
MIN.
.120 (3.0)
.200 (5.1)
1.0 (25.4)
MIN.
.060 (1.5)
.090 (2.3) DIA.
MECHANICAL DATA
• Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
• Case: Glass,hermetically sealed
• Polarity: Color band denotes cathode
• Mounting position: Any
.018 (0.46)
.022 (0.56) DIA.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND CHARACTERISTICS
(Ratings at 25
o
C ambient temperature unless otherwise specified)
RATINGS
Reverse Voltage
Peak Reverse Voltage
Forward Current (average)
Repetitive Forward Peak Current
Forward Voltage (I
F
=10mA)
Reverse Current (V
R
=20V)
Reverse Current (V
R
=75V)
SYMBOL
VALUE
UNITS
V
R
V
RM
I
O
I
FRM
V
F
I
R1
I
R2
Reverse Current (V
R
=20V,T
J
=100
o
C)
Capacitance
(note 1)
Ct
I
F
Reverse Recovery Time
(note 2)
R
θ
(ja)
Thermal Resistance (junction to ambient)
(note 3)
T
STG,
T
J
Operating Junction and Storage Temperature Range
-55 +175
Notes:
1: V
R
=0V, f=1 MHz
2: I
F
=10mA to I
R
=1mA, V
R
=6V, R
L
=100
3: Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.
75
100
150
300
1
25
5
50
4
4
0.35
V
V
mA
mA
V
nA
µA
A
pF
nS
o
C/mW
o
C
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