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RS1GB 参数 Datasheet PDF下载

RS1GB图片预览
型号: RS1GB
PDF下载: 下载PDF文件 查看货源
内容描述: 表面贴装快速开关整流器 [SURFACE MOUNT FAST SWITCHING RECTIFIER]
分类和应用: 二极管开关
文件页数/大小: 1 页 / 19 K
品牌: SSE [ SHANGHAI SUNRISE ELECTRONICS ]
   
SHANGHAI SUNRISE ELECTRONICS CO., LTD.
RS1AB THRU RS1MB
SURFACE MOUNT FAST
SWITCHING RECTIFIER
VOLTAGE: 50 TO 1000V CURRENT: 1.0A
FEATURES
• Ideal for surface mount pick and
place application
• Low profile package
• Built-in strain relief
• High surge capability
• Glass passivated chip
• Fast recovery for high efficiency
• High temperature soldering guaranteed:
260
o
C/10sec/at terminal
TECHNICAL
SPECIFICATION
SMB/DO-214AA
B
A
C
D
F
G
A
B
MAX. .155(3.94) .180(4.57)
MIN. .130(3.30) .160(4.06)
E
F
MAX. .220(5.59) .096(2.44)
MIN. .205(5.21) .084(2.13)
H
C
D
.083(2.11) .012(0.305)
.077(1.96) .006(0.152)
G
H
.008(0.203) .060(1.52)
.004(0.102) .030(0.76)
MECHANICAL DATA
• Terminal: Plated leads solderable per
MIL-STD 202E, method 208C
• Case: Molded with UL-94 Class V-O
recognized flame retardant epoxy
• Polarity: Color band denotes cathode
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25
o
C, unless otherwise stated, for capacitive
load, derate current by 20%)
RATINGS
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
(T
L
=110
o
C)
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
RS1 RS1 RS1 RS1 RS1 RS1 RS1
UNITS
AB BB DB GB JB KB MB
50
100 200 400 600 800 1000
V
35
70
140 280 420 560 700
V
50
100 200 400 600 800 1000
V
1.0
A
A
V
µA
µA
nS
pF
o
Peak Forward Surge Current (8.3ms single
I
FSM
30
half sine-wave superimposed on rated load)
Maximum Instantaneous Forward Voltage
V
F
1.3
(at rated forward current)
5.0
Maximum DC Reverse Current
T
a
=25
o
C
I
R
o
200
(at rated DC blocking voltage)
T
a
=125 C
150
Maximum Reverse Recovery Time
(Note 1)
trr
250
15
C
J
Typical Junction Capacitance
(Note 2)
30
Typical Thermal Resistance
(Note 3) R
θ
(ja)
-50 to +150
T
STG
,T
J
Storage and Operation Junction Temperature
Note:
1.Reverse recovery condition I
F
=0.5A, I
R
=1.0A,Irr=0.25A.
2.Measured at 1.0 MHz and applied voltage of 4.0V
dc
3.Thermal resistance from junction to terminal mounted on 5×5mm copper pad area
500
C/W
o
C
http://www.sse-diode.com