SHANGHAI SUNRISE ELECTRONICS CO., LTD.
SB820 THRU SB860
SCHOTTKY BARRIER
RECTIFIER
VOLTAGE: 20 TO 60V CURRENT: 8.0A
FEATURES
• Epitaxial construction for chip
• High current capability
• Low forward voltage drop
• Low power loss, high efficiency
• High surge capability
• High temperature soldering guaranteed:
250
o
C/10sec/0.375"(9.5mm) lead length
at 5 lbs tension
TECHNICAL
SPECIFICATION
TO-220A
MECHANICAL DATA
• Terminal: Plated leads solderable per
MIL-STD 202E, method 208C
• Case: Molded with UL-94 Class V-O
recognized flame retardant epoxy
• Polarity: As marked
• Mounting position: Any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25
o
C, unless otherwise stated, for capacitive
load, derate current by 20%)
RATINGS
SYMBOL
V
RRM
Maximum Repetitive Peak Reverse Voltage
V
RMS
Maximum RMS Voltage
V
DC
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
I
F(AV)
(T
C
=95
o
C)
Peak Forward Surge Current (8.3ms single
I
FSM
half sine-wave superimposed on rated load)
V
F
Maximum Forward Voltage (at 8.0A DC)
Maximum DC Reverse Current
T
a
=25
o
C
I
R
(at rated DC blocking voltage)
T
a
=100
o
C
C
J
Typical Junction Capacitance
(Note 1)
Typical Thermal Resistance
(Note 2) R
θ
(ja)
T
J
Operating Junction Temperature
T
STG
Storage Temperature
Note:
1.Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
2.Thermal resistance from junction to case
3. Suffix "R" for reverse polarity
SB
820
20
14
20
SB
830
30
21
30
SB
835
35
25
35
8.0
SB
840
40
28
40
SB
850
50
35
50
SB
860
60
42
60
UNITS
V
V
V
A
A
150
0.65
5.0
50.0
700
2.5
-65 to +125
-65 to +150
450
o
0.75
V
mA
mA
pF
C/W
o
C
o
C
-65 to +150
http://www.sse-diode.com
SSE [ SHANGHAI SUNRISE ELECTRONICS ]
